論文

2023年度

・ T.Oishi, S.Takada, K.Kudara, Y.Yamaguch, S.Shinj, and K.Yamanaka, “Drain bias dependence of Y22 and Y21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors,” Jpn. J. Appl. Phys., 63, 010905 (2024）. doi: 10.35848/1347-4065/ad1894 Abstract

・ Y. Yamaguchi, K. Nakatani, S. Shijo, T. Oishi, and Y. Miyamoto "Trapping Compensation for Transient Recovery in GaN LNAs," in IEEE Transactions on Microwave Theory and Techniques, ( Early Access ) . doi:10.1109/TMTT.2023.3332890. Abstract

・ N.C.Saha , T.Shiratsuchi, T.Oishi, and M.Kasu “Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs,” IEEE Electron Device Lett. 44 pp.1704-978 (2023). 10.1109/LED.2023.3305302 Abstract

・ N.C.Saha , T.Shiratsuchi, S.-W. Kim , K.Koyama , T.Oishi, and M.Kasu “Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs,” IEEE Electron Device Lett. 44 pp.975-978 (2023). 10.1109/LED.2023.3265664 Abstract

・ N.C.Saha , T.Shiratsuchi, S.-W. Kim , K.Koyama , T.Oishi, and M.Kasu “Fast Switching NO2-Doped p-Channel Diamond MOSFETs,” IEEE Electron Device Lett. 44 pp.793-796 (2023). 10.1109/LED.2023.3261277 Abstract

・ Y.Seki, N.C.Saha, S.Shigematsu, Y.Hoshino, J.Nakata, T.Oishi, and M.Kasu, “The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure” Jpn. J. Appl. Phys. 62 (2023) 040902. 10.35848/1347-4065/acc70d Abstract

2022年度

・ Y. Yamaguchi and T. Oishi “Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si,” IEEE Transactions on Microwave Theory and Techniques 71 pp.1945-1956 (2023). 10.1109/TMTT.2022.3232515 Abstract

・ N. C. Saha, Y. Irie, Y. Seki, Y. Hoshino, J. Nakata, S.-W. Kim, T. Oishi, and M. Kasu “1651-V All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond with 3.6×105 On/off Ratio,” IEEE Electron Device Lett. 44 pp.293-296 (2023). 10.1109/LED.2022.3232589 Abstract

・ T. Nishida, T. Oishi, T. Otsuka, Y. Yamaguchi, M. Tsuru, K. Yamanaka, “Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations” Solid-State Electronics 201 (2023) pp.108589. https://doi.org/10.1016/j.sse.2023.108589 Abstract

・ N. C. Saha, S.-W. Kim, K. Koyama, T. Oishi, and M. Kasu “3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates,” IEEE Electron Device Lett. 44 pp.112-115 (2023). 10.1109/LED.2022.3226426 Abstract

・ N. C. Saha, S.-W. Kim, T. Oishi, and M. Kasu “3326-V Modulation-Doped Diamond MOSFETs,” IEEE Electron Device Lett. 43 pp.1303-1306 (2022). 10.1109/LED.2022.3181444 Abstract

・ N. C. Saha, S.-W. Kim, T. Oishi, and M. Kasu “875-MW/cm2 Low-Resistance NO2 p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs,” IEEE Electron Device Lett. 43 pp.777-780 (2022). 10.1109/LED.2022.3164603 Abstract

・ S. Sdoeung, K. Sasaki, K. Kawasaki, J. Hirabayashi, A. Kuramata, T. Oishi, and M. Kasu “Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) b-Ga2O3 Schottky barrier diodes,” Appl. Phys. Lett. 120 (2022) 122107. 10.1063/5.0088284 Abstract

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2021年度

・ T. Oishi, K. Ito,　“A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer, “ Journal of Computational Electronics, 20 (2021) pp.2411-2455. Abstract

・山口裕太郎、大塚友絢、山中宏治、大石敏之、「トラップの非線形容量への影響を考慮したGaN-HEMT大信号コンパクトモデル」電子情報通信学会論文誌C, J104-C, pp.343-351 (2021). Abstract

・ T. Oishi, T. Otsuka, M. Tabuchi, Y. Yamaguchi, S. Shinjo, and K. Yamanaka,　“Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y22 Parameters, “ IEEE Trans. Electron Devices, 68 (2021) pp.5565-5571. Abstract

・ M. Kasu, N. C. Saha, T. Oishi and S.-W. Kim, “Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer,” Applied Physics Express 14 (2021) pp. 051004. Abstract

・ N. C. Saha, S.-W. Kim, T. Oishi, Y. Kawamata, K. Koyama, M. Kasu,　“345-MW/cm2 2608-V NO2 p-Type Doped Diamond MOSFETs With an Al2O3 Passivation Overlayer on Heteroepitaxial Diamond,” IEEE Electron Device Lett. 42 pp.903-906 (2021). Abstract

・ S. Shigematsu, T. Oishi, Y. Seki, Y. Hoshino, J. Nakata and M. Kasu, “Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process,” Jpn. J. Appl. Phys., 60, 050903 (2021). Abstract

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2020年度

・ S.Sdoeung, K.Sasaki, K.Kawasaki, J.Hirabayashi, A.Kuramata, T.Oishi, and M.Kasu “Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy,” Appl. Phys. Lett. 117 (2020) 022106. Abstract

・ N.C.Saha, T.Oishi, S.Kim, Y.Kawamata, K.Koyama, and M.Kasu　“145 MW/cm2 Heteroepitaxial Diamond MOSFETs with NO2 p-type Doping and an Al2O3 Passivation Layer,” IEEE Electron Device Lett. 41 pp.1066-1069 (2020). Abstract

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2019年度

・ T. Oishi, K. Urata, M. Hashikawa, K. Ajiro and T. Oshima, “Microwave Power Rectification using β-Ga2O3 Schottky barrier diodes,” IEEE Electron Device Lett. 49 pp.1393-1395 (2019). Abstract

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2018年度

・ J.Liang, S.Masuya, S.Kim, T.Oishi, M.Kasu and N.Shigekawa, “Stability of diamond/Si bonding interface during device fabrication process,” Applied Physics Express 12 (2019) pp.016501. Abstract

・ T. Oshima, M. Hashikawa, S. Tomizawa, K. Miki, T. Oishi, K. Sasaki, and A. Kuramata, “β-Ga2O3-based metal-oxide-semiconductor photodiodes with HfO2 as oxide,” Applied Physics Express 11 (2018) pp.112202. Abstract

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2017年度

・T. Oshima, Y. Kato, N. Kawano, A. Kuramata, S. Yamakoshi, S. Fujita, T. Oishi, and M. Kasu, “Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface,” Applied Physics Express 10 (2017) pp.035701. Abstract

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2016年度

・ T. Oshima, A. Hashiguchi, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, T. Oishi, and M. Kasu, “Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects,” Jpn. J. Appl. Phys., 56, 086501 (2017). Abstract

・T. Oishi, N. Kawano, S. Masuya, and M. Kasu, “Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna,” IEEE Electron Device Lett. 38 pp.87-90 (2017). Abstract

・M. Kasu, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oshima, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda, “Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes,” Jpn. J. Appl. Phys., 55, 1202BB (2016）. Abstract

・T. Oshima, R. Wakabayashi, M. Hattori, A. Hashiguchi1, N. Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, T. Oishi, and M. Kasu, “Formation of indium tin oxide ohmic contacts for β-Ga2O3,” Jpn. J. Appl. Phys., 55, 1202B7 (2016）. Abstract

・M.Kasu, K.Hirama, Kazuya Harada, and T.Oishi, “Study on capacitance-voltage characteristics of diamond field-effect transistors with NO2 hole dopinb and Al2O3 gate insulator layer,” Jpn. J. Appl. Phys., 55, 041301 (2016）. Abstract

・大石敏之、岸川拓也、吉川大地、平間一行、嘉数誠、「表面伝導型ダイヤモンドFETのデバイスシミュレーションに関する検討」　電子情報通信学会論文誌C、J99-C, No.5, pp.193-200 (2016). あらまし

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2015年度

・T.Oishi, K.Harada, Y.Koga, and M.Kasu, “Conduction mechanism in highly doped b-Ga2O3 (-2 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes,” Jpn. J. Appl. Phys., 55, 030305 (2016）. Abstract

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2014年度

・T.Oishi, R.Higashi, K.Harada, K.Hirama, and M.Kasu, “High-mobility b-Ga2O3 (-2 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact,” Applied Physics Express 8 (2015) pp.031101. Abstract

・H.Sasaki, K.Kadoiwa, H.Koyama, Y.Kamo, Y.Yamamoto, T.Oishi, K.Hayashi, "Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation," Microelectronic Engineering vol.54, pp.2662 - 2667, (2014). Abstract