国際会議

2024年度

・N. C. Saha, T. Shiratsuchi, M. Eguchi, T. Oishi, and M. Kasu, “Fast (4.38 ns) dynamic switching operation of NO2-doped p-channel diamond MOSFETs,” 15th Topical workshop on heterostructure microelectronics (TWHM 2024), Aug. 26-29, 2024, Sendai, 5-5.

・T. Nanjo, M. Furuhashi, T. Watahiki, T. Oishi and T. Egawa, “Impact of post metallization annealing in EID AlGaN/GaN MOS-HEMTs,” 15th Topical workshop on heterostructure microelectronics (TWHM 2024), Aug. 26-29, 2024, Sendai, 10-5.

・T.Oishi, T. Nanjo, M. Furuhashi, and K. Nishikawa, “Study on Effects of Mechanical Stress in Normally-off EID AlGaN/GaN MOS-HEMTs by TCAD Simulation,” 15th Topical workshop on heterostructure microelectronics (TWHM 2024), Aug. 26-29, 2024, Sendai, 10-6.

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2022年度

・T. Nishida, T. Oishi, T. Otsuka, Y. Yamaguchi, M. Tsuru, K. Yamanaka, “Characterization of Fe-doping Induced Trap in AlGaN/GaN HEMTs using Low Frequency Y22 Measurement,” 14th Topical workshop on heterostructure microelectronics (TWHM 2022), Aug. 29th- Sept. 1st, 2022, Hiroshima, 8-3.

・T. Otsuka, Y. Yamaguchi, M. Tsuru, and T. Oishi, “Mechanisms of Buffer and Surface Traps in GaN HEMTs for Low Frequency Y21 and Y22 parameters,” The European Microwave Conference (EuMC) 2021, 2nd ? 7th April 2022, London, UK (Video Letter). EuMIC12-5. 10.23919/EuMIC50153.2022.9783683 Abstract

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2020年度

・M.Tabuchi, T.Otsuka, Y.Yamaguchi, S.Shinjo and T.Oishi, “Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter Measurements,” 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2020), September 2-4, 2020, Hiroshima, Japan. Abstract

・K.Ito and T.Oishi, “Study on Effects of GaN Trap Depth Profiles to Transient Response in GaN HEMTs on GaN Substrates by Device Simulation,” 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2020), September 2-4, 2020, Hiroshima, Japan. Abstract

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2019年度

・T. Otsuka,Y. Yamaguchi, S. Shinjo, and Toshiyuki Oishi, “Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation,” IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), November 3-6, 2019, Nashville, Tennessee, USA, 3b.2.

・M. Kasu, T. Kamogawa, N.C. Saha, T. Oishi, and S.W. Kim, “RF measurements and analysis for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds,” 30th International Conference on Diamond and Carbon Materials(ICDCM2019), 8-12 September, 2019, Melia Lebreros, Seville, Spain, 06A.1.

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2018年度

・Y.Yamaguchi, T.Otsuka, M.Hangai, S.Shinjo, T.Oishi, “Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement,” 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 15-17 Oct. 2018, 2018, San Diego, CA, USA.

・M. Kasu, D. Fujii, S. Masuya, T.Oishi, S. Kim, “Diamond field-effect transistors fabricated on highquality heteroepitaxial diamond wafers treated by chemical mechanical polishing technology,” 29th International Conference on Diamond and Carbon Materials(ICDCM2018), 2-6 September, 2018, Valamar Lacroma Dubrovnik, Dubrovnik, Croatia, O6A.4.

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2017年度

・T. Oishi, K. Ajiro, S. Yamaguchi, Y. Yamaguchi, K. Yamanaka, “Extraction of equivalent circuit parameters for buffer traps in AlGaN/GaN HEMTs by using low frequency output admittance measurement,” 12th Topical workshop on heterostructure microelectronics (TWHM 2017), Aug. 28-31, 2017, Kirishima, 5-2.

・Y. Yamaguchi, K. Yamanaka, T. Oishi, “A Scalable Large-Signal Distributed Model for mm-Wave GaN HEMTs,” 12th Topical workshop on heterostructure microelectronics (TWHM 2017), Aug. 28-31, 2017, Kirishima, 10-5.

・T. Oshima, A. Hashiguchi, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, T. Oishi, and M. Kasu, “Electrical properties of Schottky diodes fabricated on a (001) β-Ga2O3 single crystal substrate having line-shaped voids and small defects,” 2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017), Sept. 12-15, 2017, Parma, Italy , P22.

・M. Kasu, N. Fukami, Y. Ishimatsu, S. Masuya, T. Oishi, D. Fujii, S.W. Kim, “Diamond field-effect transistors fabricated on high-quality heteroepitaxial diamond wafer using microneedle technology,” Hasselt Diamond Workshop 2018(SBDD XXIII), March 7 ? 9, 2018, Hasselt, Belgium, 12.4.

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2016年度

・T. Oishi, N. Kawano, and M. Kasu, “Demonstration of RF-DC conversion using dual diode rectifier circuit for rectenna with diamond Schottky barrier diodes,” Compound Semiconductor Week 2016 (the 43rd International Symposium on Compound Semiconductors (ISCS)), June 27-30, 2016, Toyama, MoP-ISCS-015. Abstract

・M. Kasu, T. Oishi, N. Kawano, A. Miyachi, S. Kawasaki, “Fabrication of diamond rectenna devices for wireless power transmission,” International Conference on Diamond and Carbon Materials, Sept. 4-8, 2016, Le Corum, Montpellier, France, O17.5.

・ M. Kasu, K. Hanada, Y. Koga, T. Oshima, T. Oishi, “Fabrication of diamond field-effect transistorswith double NO2 hole doping and low-temperature Al2O3 gate insulator layer,” International Conference on Diamond and Carbon Materials, Sept. 4-8, 2016, Le Corum, Montpellier, France, P13.19.

・ Y. Yamaguchi, J. Kamioka, S. Shinjo, K. Yamanaka and T. Oishi, “Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface,” 38th IEEE COMPOUND SEMICONDUCTOR IC (CSIC) SYMPOSIUM, Oct. 23-26, 2016, Austin, Texas, L.1. Abstract

・M. Kasu, T. Oishi, “Diamond devices for RF applications,” 2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 21-25 Aug. 2016, Korea, S-D5-5, pp.828-830. Abstract

・M. Kasu, T. Oishi, “Recent Progress of Diamond Devices for RF Applications,” 38th IEEE COMPOUND SEMICONDUCTOR IC (CSIC) SYMPOSIUM, Oct. 23-26, 2016, Austin, Texas, Q.2. Abstract

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2015年度

・Y.Koga, K.Harada, K.Hanada, T.Oishi, and M.Kasu, “Fabrication of Schottky Barrier Diodes of EFG-Grown Sn-doped β-Ga2O3 (201) single-crystals,” International Workshop on Gallium Oxide and Related Materials 2015, Nov. 4-6 , Kyoto, E28.

・S.Yamaguchi, D.Yoshikawa, Y.Yamaguchi, K.Yamanaka, T.Oishi, “Analysis for forward characteristics of GaN Schottky barrier diodes using floating electrodes,” 11th Topical workshop on heterostructure microelectronics (TWHM 2015), Aug. 23-26, 2015, Takayama, 8-8.

・D.Yoshikawa, T.Oishi, S.Yamaguchi, Y.Yamaguchi, K.Yamanaka, “Study of two dimensional effects in forward characteristics of GaN Schottky barrier diodes by using patterns with two different sizes,” 11th Topical workshop on heterostructure microelectronics (TWHM 2015), Aug. 23-26, 2015, Takayama, 8-7.

・T.Oishi, Y.Koga, K.Harada, and M.Kasu, “Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate,” The 2015 international Meeting for Future of Electron Devices, Kansai (IMFEDK), June 4-5 2015, Kyoto, PA-01. Abstract

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2014年度

・Y. Yamaguchi, T. Oishi, H. Otsuka, T. Nanjo, H. Koyama, Y. Kamo, and K. Yamanaka, "Modeling of Frequency Dispersion at Low Frequency for GaN HEMT," 2014 Asia-Pacific Microwave Conference (APMC2014), Nov. 6, 2014, Sendai, Japan. TH1G-24. Abstract

・M.Kasu and T.Oishi, "Diamond RF Power Transistors: Present Status and Challenges," 2014 Europian Microwave Conference (EuMW2014), Oct. 6 2014, Roma, Italy. EuMIC09-03. Abstract

・H.Sasaki, K.Kadoiwa, H.Koyama, Y.Kamo, Y.Yamamoto, T.Oishi, K.Hayashi and K.H.Teo, "Decrease in On-State Gate Current of AlGaN/GaN HEMTs by Recombination-Enhanced Defect Reaction of Generated Hot Carriers," Reliability of compound semiconductors (ROCS2014), May 19, 2014, Colorado, USA. Session III Part 2.