SAGA UNIVERSITY
POWER ELECTRONICS LABORATORY (Prof. Kasu)

Professor Makoto KASUKasu's profile

 Environmental and Energy Issue is now serious in the world. Power efficiency in electronics, information network, and power supply depends on silicon semiconductors used in the entire system. Our mission is to achieve diamond semiconductor and realize high-efficient power device and systems and to solve the problem.

 We will make Japan "environmental-friendly country".

Biography

 Prof. Makoto Kasu received the B.E., M.E., and Ph.D. degrees in electrical engineering from Kyoto University, Kyoto in 1985, 1987, and 1990, respectively.
 In 1990, he joined NTT Basic Research Laboratories. He has been engaged in III-V semiconductor research, mainly crystal-growth mechanisms on the atomic order and nanostructure fabrication technologies. From 2003 to 2004, he was a visiting researcher at the University of Ulm, Germany. In 2007 he was an invited professor at University of Paris XIII.
 In 2011 October, he was appointed as Professor of Power Electronics at Saga University, Japan.

Research field

Japanese Society of Applied Physics

Japanese Journal of Applied Physics Editor

Japanese Soceity of Surface Science

Institute of Electrncs, Information, Communicatios (ICICE)

Japanese Society of Crystal Growth

Diamond Forum

Academic activities

 He is a member of the Japan Society of Applied Physics (JSAP), the Institute of Electronics, Information and Communications Engineers of Japan (IEICE), and the Surface Science Society of Japan (SSSJ).
 He received the Electronic Material Symposium (EMS) Award and the Paper Award of Japanese Association of Crystal Growth (JACG) for his nitride research.

Educations

2010~2011
"RF Electronic Circuits"
Waseda University, Department of Electronic Engineering
2011
"Nano Electronics"
Tsukuba University
2011~
"Power Electronics"
Saga University, Department of Electrical and Electronic Engineering
"Power System Engineering"
Saga University, Graduate School of Electrical and Electronic Engineering
2013~
"Engineering Ethics"
Saga University, Department of Electrical and Electronic Engineering

Awards

2000
NTT Basic Research Laboratories Research Award
"High Efficient Electron Emission from Aluminum Nitrides"
2001
Electronic Materials Symposium (EMS) Award
"High Efficient Electron Emission from Aluminum Nitrides"
2002
NTT Core Laboratory Group Achievement Award
"Nitride Semiconductor Crystal Growth and Band Engineering"
2003
NTT Basic Research Laboratories Acievement Award
"High-frequency Diamond Field-Effect Transisotrs"
2003
NTT Core Laboratory Group Media Award
"Diamond Semiconductors"
2004
NTT Core Laboratory Group Media Award
"World's Shortest Wavelength 210 nm Deep-ultra violet Light Emitting Diodes"
2004
NTT Basic Research Laboratories Achievement Award
"World's Shortest Wavelength 210 nm Deep-ultra violet Light Emitting Diodes"
2006
NTT Technical Review Award
gAluminum Nitride Deep-Ultraviolet Light-Emitting Diodes"
2010
Japanese Society of Crystal Growth Paper Award
"MOCVD Growth Mechanisms and its Application to AlN Light Emitting Diodes"
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POWER ELECTRONICS LAB
(KASU LAB)

Honjo-machi, Saga 840-8502
Japan

TEL +81-952-28-8648
FAX +81-952-28-8648
E-mail kasu(at)cc.saga-u.ac.jp