We grow high-purity diamond crystal in order to make diamond power transistors.
Microwave power | 5 kW |
Microwave frequency | 2.45 GHz |
Sources | CH4 (methane) H2 (hydrogen) |
Growth rate | 0.2~5 micron per hour |
We grow nitride and silicon carbide thin films.
We measure device and semiconductor samples at 1000 oC.
Honjo-machi, Saga 840-8502
Japan
TEL +81-952-28-8648
FAX +81-952-28-8648
E-mail kasu(at)cc.saga-u.ac.jp