
          
          We grow high-purity diamond crystal in order to make diamond power transistors.
| Microwave power | 5 kW | 
| Microwave frequency | 2.45 GHz | 
| Sources | CH4 (methane) H2 (hydrogen)  | 
              
| Growth rate | 0.2~5 micron per hour | 
 
          We grow nitride and silicon carbide thin films.

          
          We measure device and semiconductor samples at 1000 oC.
Honjo-machi, Saga 840-8502
      Japan
TEL +81-952-28-8648
      FAX +81-952-28-8648
      E-mail kasu(at)cc.saga-u.ac.jp