Semiconductor electronic devices are indispensable for today's life. Our laboratory study on wide bandgap semiconductor devices to improve dramatically the electronic system efficiency.
Main theme of our laboratory is following. A part of theme is studied with Kasu Lab.
1．Electronic devices using wide bandgap semiconductors
(1) Gallium Nitride (GaN)
Major issue is trap in the GaN devices in order to improve high frequency and high power switching characteristics.
We study on the trap location and properties by using time/frequency domain measurement and TCAD simulation.
(2) Gallium Oxide (Ga2O3)
This material is promising for high power devices such as Schottky barrier diodes and transistors.
We study on the basic characterization of these devices and device structures for an application to high power systems.
(3) Diamond
Diamond is super material but some issues are remained.
We try to solve these issues through analysis and measurement of device characteristics.
(4) Electronic devices for Rectenna (rectifying antenna)
Wide bandgap devices are promising for not only high power Rectenna but also medium and low power Rectenna.
We study on a device structure to improve the efficiency by analysis of high frequency characteristics.
2．Device modeling technology
Optimization of device structure is restricted to DC and small signal characteristics sue to lack of device model between device structure and large signal properties.
We study on device model combined to high frequency and high speed switching characteristics.